Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

“It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, ‘an emerging company worthy of tracking,’” commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

Compared to state-of-the-art silicon power MOSFETs, EPC’s eGaN^® FETs are smaller and have many times superior switching performance. Applications that benefit from eGaN FETs’ enhanced performance include RF envelope tracking, wireless power transmission, high-efficiency DC-DC power supplies, point-of-load converters, and class D audio amplifiers. EPC has published a roadmap that brings the cost of eGaN technology to below silicon MOSFET technology, paving the way for an overall displacement of the aging, multibillion dollar power MOSFET and IGBT markets..

Additional information on EPC’s family of eGaN FETs can be found at http://epc-co.com/epc/Products/eGaNFETs.aspx.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.