|By Business Wire||
|December 19, 2012 04:45 AM EST||
Toshiba Corporation (TOKYO: 6502) has added multi-bit (2-bit and 4-bit) flow-through type ESD (electrostatic discharge) diode products to its low capacitance and low clamp voltage Extreme High Speed series. The new products, DF6D7M1N (2-bit) and DF10G7M1N (4-bit), realize multiple diodes while maintaining the signal quality achieved by the low-inductance flow-through layout. Samples are available now with mass production scheduled for the end of December.
Toshiba Compact ESD Protection Diodes Supporting High-speed Data Lines (Photo: Business Wire)
ESD protection for USB 3.0 and other interfaces
1. Multi-bit, flow-through type
2. Low clamp voltage: VC=12V (typ.) at IEC61000-4-5 compliant (IPP=1A)
3. Suitable for high speed signal lines: Ct=0.3pF (typ.)
4. ESD-immunity level: ±8kV guaranteed at IEC61000-4-2 compliant (contact)
5. Small packages
DF6D7M1N (2-bit) : DFN6 package (1.25mm×1.0mm×0.5mm)
DF10G7M1N (4-bit) : DFN10 package (2.5mm×1.0mm×0.5mm)
|Peak reverse voltage(VRRM)||5.0V|
|Reverse breakdown voltage(VBR)||6.0V(min) @IBR=1mA|
|Reverse current(IR)||0.5μA(max) @VRWM=5V|
|Diode capacitance(Ct)||0.3pF(typ.) @VR=0V, f=1MHz|
|Clamp voltage(VC)||12V(typ.) @IPP=1A|
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