|By Business Wire||
|March 15, 2013 04:01 AM EDT||
Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9010 development board is 2” x 1.5” and contains not only two EPC2016 eGaN FET in a half bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9010_qsg.pdf, is included with the EPC9010 development board for reference and ease of use.
EPC9010 development boards are priced at $99.00 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Design Information and Support for eGaN FETs:
- Download EPC2016 and all EPC eGaN datasheets at http://epc-co.com/epc/Products/eGaNFETs.aspx
- Development boards and other design support available at http://epc-co.com/epc/Products/DemoBoards.aspx
- View eGaN product training support materials at http://epc-co.com/epc/DesignSupport/eGaNFETBasics.aspx
- Application notes for eGaN FETs can be found at http://epc-co.com/epc/Applications/ApplicationBasics.aspx
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.