| By Business Wire |
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| March 15, 2013 04:01 AM EDT |
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Efficient Power Conversion Corporation (EPC) introduces the EPC9010
development board to make it easier for engineers to start designing
with a 100 V enhancement-mode gallium nitride (eGaN) field effect
transistor (FET) in applications such as high-speed DC-DC power
supplies, point-of-load converters, class D audio amplifiers,
hard-switched and high frequency circuits.
The EPC9010 development board is a 100 V maximum device voltage, 7 A
maximum output current, half bridge with onboard gate drives, featuring
the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The
purpose of this development board is to simplify the evaluation process
of eGaN FETs by including all the critical components on a single board
that can be easily connected into any existing converter.
The EPC9010 development board is 2” x 1.5” and contains not only two
EPC2016 eGaN FET in a half bridge configuration using the LM5113 gate
driver from Texas Instruments, as well as supply and bypass capacitors.
The board contains all critical components and layout for optimal
switching performance. There are also various probe points to facilitate
simple waveform measurement and efficiency calculation.
A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9010_qsg.pdf,
is included with the EPC9010 development board for reference and ease of
use.
EPC9010 development boards are priced at $99.00 each and are available
for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Design Information and Support for eGaN FETs:
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as servers,
wireless
power transmission, envelope
tracking, RF transmission, power-over-ethernet
(PoE), solar micro inverters, energy efficient lighting, and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs. Visit our web site: www.epc-co.com.
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like
EPC on Facebook at http://www.facebook.com/EPC.Corporation
eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.
