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Toshiba - TL1F1-LW1 Technology Analysis

DUBLIN, Ireland, March 13, 2014 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/bfqmpt/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Technology Analysis" report to their offering.
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The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure

Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.

The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding
process without gold.

Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.

A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.


The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing report is also available.

Key Topics Covered:

  • Physical Analysis
  • Physical Analysis Methodology- Package Views & Dimension- Package Opening
  • Package X-Ray
  • Package Cross-Section
  • Phosphor
  • Protective diode
  • LED Views & Dimensions
  • Cathode
  • Anode
  • Epitaxy
  • LED Thickness
  • LED Characteristics
  • Manufacturing Process Flow
  • Global Overview
  • LED Fabrication Unit
  • LED Process Flow
  • Package Fabrication Unit
  • Package Process Flow


For more information visit http://www.researchandmarkets.com/research/bfqmpt/toshiba

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