SYS-CON MEDIA Authors: Tom Leyden, Trevor Parsons, Sean Houghton, Glenn Rossman, Ignacio M. Llorente

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Global Power Transistor Market Report

DUBLIN, Ireland, April 14, 2014 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/82bpjk/global_power) has announced the addition of the "Global Power Transistor Market Report" report to their offering. 
     (Logo: http://photos.prnewswire.com/prnh/20130307/600769 )


The analysts forecast the Global Power Transistor market to grow at a CAGR of 7.32 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing demand for power efficient electronic products. The Global Power Transistor market has also been witnessing the convergence of different technologies on a single platform. However, slowdown in the global economy could pose a challenge to the growth of this market. 

The report, the Global Power Transistor Market Report, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market in the Americas and the APAC and EMEA regions; it also covers the Global Power Transistor market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.

The availability of multiple features on a single platform is an emerging trend being witnessed in the market. This is mainly due to the rapid technological developments seen in various electronic devices. Industries that extensively use power transistors such as Computing, Networking and Telecom, and Consumer Electronics are driving the need for multiple features on a single platform. 

These devices mainly use a combination of a power-integrated circuit with MOSFETs either as a monolithic device or as a system in a package. Since many computers, networking, and telecom equipment have board space restrictions, such integration enables manufacturers to reduce board space. 

Moreover, integration not only minimizes voltage fluctuation in the integrated device, but also allows switching at a higher speed. Thus, technological convergence is expected to have a positive influence on the growth of the Global Power Transistor market during the forecast period.

According to the report, one of the major drivers in this market is the increasing demand for power-efficient electronic products. Power transistors improve switch performance and efficiency while enhancing system reliability and robustness, thereby increasing the power efficiency of electronic products.

Further, the report states that one of the major challenges in this market is the low demand due to the global economic slowdown. The demand for power transistors is dependent on the growth of various sectors including Automotive, Consumer Electronics, Power and Energy Management, among others. In recent years, the Consumer Electronics sector has been witnessing a slowdown because of several factors such as sluggish economic recovery in the US, earthquakes and tsunamis in Japan, and the Eurozone debt crisis.


Key Topics Covered: 

1. Executive Summary

2. List of Abbreviations

3. Introduction

4. Market Research Methodology

5. Scope of the Report

6. Market Landscape

7. Geographical Segmentation

8. Key Leading Countries

9. Vendor Landscape

10. Buying Criteria

11. Market Growth Drivers

12. Drivers and their Impact

13. Market Challenges

14. Impact of Drivers and Challenges

15. Market Trends

16. Trends and their Impacts

17. Key Vendor Analysis

18. Other Reports in this Series


Companies Mentioned:

  • Fairchild Semiconductor International Inc.
  • Fuji Semiconductor Co.
  • IXYS Corp.
  • Infineon Technologies AG
  • International Rectifier
  • Microsemi Corp.
  • Mitsubishi Electric Corp.
  • NXP Semiconductors N.V.
  • STMicroelectronics
  • Texas Instruments Inc.
  • Toshiba Corp.



For more information visit http://www.researchandmarkets.com/research/82bpjk/global_power


Media Contact: Laura Wood , +353-1-481-1716, [email protected]


SOURCE Research and Markets

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