SYS-CON MEDIA Authors: Kevin Benedict, Adrian Bridgwater, Carmen Gonzalez, Dana Gardner, Elizabeth White

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Research and Markets: Global Power Discrete Market Forecasts & Opportunities, 2018

Research and Markets (http://www.researchandmarkets.com/research/s8nt9d/global_power) has announced the addition of the "Global Power Discrete Market Forecasts & Opportunities, 2018" report to their offering.

The growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics.

The emerging market for SiC and GaN power semiconductors is expected to drive the Global Power Discrete market during the forecast period. SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes. Currently, SiC is widely used in the development of power semiconductors; however, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years. In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterized to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon. The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments.

Further, the report states that the demand for power discrete semiconductors is dependent on the growth of various customer segments including the EV/HEV, Renewable Energy, Industrial Motor Drive, and LED Lighting segments. In recent years, the Industrial Motor Drive segment has been witnessing a slowdown because of several factors such as the sluggish economic recovery in the US, the natural disasters occurring in Japan, and the Eurozone debt crisis.

Key vendors dominating this space are:

  • Fairchild Semiconductor International Inc.
  • Infineon Technologies AG
  • Mitsubishi Electric Corp
  • STMicroelectronics N.V.
  • Toshiba Corp.

Key Topics Covered:

  1. Executive Summary
  2. List of Abbreviations
  3. Scope of the Report
  4. Market Research Methodology
  5. Introduction
  6. Market Landscape
  7. Global Power Discrete Market Segmentation by Application
  8. Global Power Discrete Market Segmentation by Product
  9. Global Power Discrete Market by Geographical Segmentation
  10. Buying Criteria
  11. Market Growth Drivers
  12. Drivers and their Impact
  13. Market Challenges
  14. Impact of Drivers and Challenges
  15. Market Trends
  16. Trends and their Impact
  17. Vendor Landscape
  18. Key Vendor Analysis

For more information visit http://www.researchandmarkets.com/research/s8nt9d/global_power

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